TSM950N10CW RPG
TSM950N10CW RPG
Part Number TSM950N10CW RPG
Description MOSFET N-CH 100V 6.5A SOT223
Package / Case TO-261-4, TO-261AA
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 6.5A (Tc) 9W (Tc) Surface Mount SOT-223
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TSM950N10CW RPG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TSM950N10CW
Standard Package 2500
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 50V
FET Feature -
Power Dissipation (Max) 9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
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